Hysteretic resistance concepts in ferroelectric thin films

Simulation of Ferroelectric Thin Films

The hysteresis properties of ferroelectric thin films open an elegant and promising way to build nonvolatile memory cells. Our basic goal is to set up a tool which is able to reproduce the macroscopic behavior of the devices by calculating current, voltage and charge at the contacts correctly. Our tool, MINIMOS-NT, provides a rigorous approach to describe the static hysteresis properties of fer...

Scaling Of Ferroelectric Properties In Thin Films

A fundamental issue in ferroic systems (ferromagnetic and ferroelectric) is the scaling of the order parameter (magnetization or polarization) with size. Specifically, in ferroelectric thin films, deviations in the polarization can occur due to: (i) competition between thermal vibrations and the correlation energy (which aligns the dipoles); (ii) damage during fabrication. These deviations will...

Ferroelastic domains in bilayered ferroelectric thin films

We investigate theoretically ferroelastic domain fractions in a heteroepitaxial bilayer consisting of 001 tetragonal PbZrxTi1−xO3 and 001 rhombohedral PbZr1−xTixO3 on a thick 001 passive substrate as a function of the lattice misfit strain between layers and the substrate. By considering the self-strain in each layer and the indirect elastic interaction between the layers, we provide a numerica...

Charge Transport in Ferroelectric Thin Films

Tunable Schottky Barrier in Photovoltaic BiFeO3 Based Ferroelectric Composite Thin Films

We examine the photo-assisted polarization loop in a BiFeO3 thin film under UV light illumination. BiFeO3 thin film prepared by pulsed laser deposition method onto the BaTiO3 thin film and the polarization behavior has been measured under poling voltage. Our results show the engineered polarization due to controllable schottky barrier under inverse poling voltage. This control on schottky barri...